Circuit substrate and manufacture thereof, ceramic composition for circuit substrate, and electronics computer

ABSTRACT

Ceramic circuit substrate which is sintered at 900 to 1,050° C. and have low relative dielectric constant, thermal expansion coefficient comparable to that of silicon, and high bending strength, and a method of manufacturing are provided by using a glass with a softening point of 850 to 1,100° C., that is, a glass having a composition included in an area in FIG. 1 (triangular composition diagram of SiO 2  --B 2  O 3  --R 2  O, a composition is represented by the position of a small circle, the number in a small circle represents the composition number) defined with lines connecting points representing the first, third, tenth, eleventh, and fourth compositions respectively as raw material.

This application is a Continuation application of application Ser. No.08/512,705; filed Aug. 8, 1995, the contents of which are incorporatedherein by reference in their entirety.

BACKGROUND OF THE INVENTION AND RELATED ART STATEMENT

The present invention relates to a circuit substrate and the technologyfor providing the circuit substrate, and more particularly to a circuitsubstrate, which is suitable especially when organic binder is used as abinder and base metal conductive material such as copper is used asconducting material, a method of manufacturing thereof, and glass andceramic composition for manufacturing the circuit substrate.

Conventionally, for multilayer circuit substrate on which siliconsemiconductor integrated circuit elements are mounted, alumina (Al₂ O₃)has been used as insulating material, molybdenum (Mo) and tungsten (W),which have high melting point and are possible to be co-sintered withalumina, has been used as conducting material. However, because thethermal expansion coefficient of alumina is as high as about 7×10⁻⁶ /°C., when silicon semiconductor elements are mounted directly on analumina substrate, the conductive connection is subjected to the seriousstress, and the connection become unreliable. In addition, because ofhigh relative dielectric constant of alumina as high as about 10, thesignal transmission is not sufficiently fast as expected for highperformance multilayer circuit substrate. Moreover, the resistance ofabove-mentioned metals are relatively high. To solve the problems, inJapanese Patent Provisional Publication Heisei-2-49550 (1990), amultilayer ceramic circuit substrate and manufacture thereof havingcopper conducting layer and glass ceramic layer containing a mixtureconsisting of 20% or more and less than 50% by weight of alumina, 10% ormore and less than 60% by weight of quartz glass, and 20% or more andless than 40% by weight of amorphous glass or crystallized glass, andusing a binder containing thermal depolymerization type resin.

OBJECT AND SUMMARY OF THE INVENTION

Generally, in the manufacturing process of ceramic substrate, in thefirst step an organic binder is added to ceramic powder to prepare greensheet. As the organic binder, polyvinyl-butyral resin and thermaldepolymerization type acrylic resin are used generally. As a solvent forthese binder resins, usually organic solvents such asmethyl-ethyl-ketone and methanol are used. These organic solventsinvolve the problems of explosion risk and toxicity to human body.Therefore from the view point of safety and hygiene, organic bindermaterial which utilizes water as solvent is preferable than thatutilizes organic solvent. However, because water soluble organic bindermaterial usually has hydrophilic functional groups, such organic bindermaterial is not easily thermally decomposed comparing with organicbinder material which utilizes organic solvent, and involves a problemof difficulty in binder removal as described hereunder.

To improve the performance and reliability of the above mentionedmultilayer ceramic circuit substrate for mounting on siliconsemiconductor integrated circuit elements, various properties arerequired for ceramic substrate material, that is, the ceramic substratecan be sintered at a temperature of 1,050° C. or below which temperatureis lower than the melting point of copper so as that copper of lowconductive resistance is used, has low relative dielectric constant, hasthe thermal expansion coefficient approximately equal to that ofsilicon, and is excellent in bending strength. As ceramic material whichsatisfies these conditions, filler-containing borosilicate glass isknown.

However, filler-containing borosilicate glass involves a problem ofwater resistance of borosilicate glass when green sheet is prepared.Because of poor water resistance, boron oxide contained in borosilicateglass is easily eluted, therefore boric acid crystals deposits on theglass surface in a high humidity atmosphere. The crystallized boric acidwill cause unpreferable failure in printing when conductive material isprinted on the green sheet. Some borosilicate glass crystallizescrystobalite crystal when heat-treated. Crystobalite crystal has atransition of crystal phase at about 230° C. in which crystobaliteexhibits significant volume change, the transition causes the crackingof the substrate, so the crystallization is not preferable.

On the other hand, for suitable use of copper as conducting material, itis preferable that the binder removal process (a process for burningorganic binder for preparation of green sheet) is conducted in anatmosphere which does not oxidize copper. As such atmosphere, steam,nitrogen, and hydrogen atmosphere are known.

The burning of organic binder proceeds stepwise, in the first steporganic resin decomposes to form carbon and subsequently carbon isoxidized. The former step proceeds at a temperature of about 200 to 400°C. and the latter step proceeds at a temperature of approximately 700°C. or higher. Especially the latter step is a reaction represented bythe chemical formula;

    C+2H.sub.2 O→CO.sub.2 +2H.sub.2

and the reaction proceeds faster in the higher temperature atmosphere.Therefore, burning of organic binder at higher temperature facilitatesthe removal of binder to lead the high productivity. However, ifsintering of glass ceramic substrate material proceeds excessivelyduring the heat treatment, the sintering causes the inclusion of residueof organic resin and carbon in the sheet, the inclusion causesunpreferable problems such as the deterioration of insulation quality ofglass ceramics and insufficient compaction of glass ceramics duringsubsequent heat treatment. The excessive sintering of glass ceramicsubstrate material during heat treatment for burning organic binder isnot preferable. As described hereinbefore, the thermal decomposition ofwater soluble organic binder material is slower than that of organicsolvent-soluble organic binder material. Therefore the use of watersoluble organic binder material requires the use of glass ceramicsubstrate material which is suitable for use with water soluble organicbinder material. Usually, residual carbon content of 200 ppm or less insubstrate is preferable.

After burning of organic binder, glass ceramics is subjected to heattreatment for compaction. The heat treatment is referred as sintering inother ward. For higher productivity of multilayer ceramic circuitsubstrate manufacturing, short time heat treatment is required.

Accordingly, it is an object of the present invention to provide amethod for manufacturing ceramic circuit substrate which is sintered ata temperature of 1,050° C. or below, having low relative dielectricconstant, the thermal expansion coefficient approximately equal to thatof silicon (3.0×10⁻⁶ /° C.), and excellent bending strength, and ceramicmaterial to be used for the substrate.

To accomplish the object described above, the present invention providesa manufacturing process of circuit substrate comprising a series of foursteps described hereinafter (1) to (4), glass and ceramic compositionused for the manufacturing process, circuit substrate manufacturedthrough the process, and electronic computers provided with the circuitsubstrate.

(1) a process for preparation of a slurry by mixing glass, filler,organic binder, and solvent,

(2) a process for preparation of green sheet from the slurry,

(3) a process for forming conductor by forming via hole and/or wiringusing conducting material on the green sheet, and

(4) a process for heating the green sheet at 700 to 880° C. to removethe binder and followed by heating at 900 to 1,050° C. to sinter,

wherein the glass contains SiO₂, B₂ O₃, R₂ O (R represents alkalimetal), and unavoidably accompanied impurities, and have a compositionincluded in an area, in FIG. 1 of a triangular composition diagram ofSiO₂ --B₂ O₃ --R₂ O defined with five lines of a line connecting a pointof first composition and a point of third composition, a line connectingthe point of third composition and a point of tenth composition, a lineconnecting the point of tenth composition and a point of eleventhcomposition, a line connecting the point of eleventh composition and apoint of fourth composition, and a line connecting the point of fourthcomposition and the point of first composition (the area includes thelines). In FIG. 1, the points representing the compositions areindicated with small circles, and numerals in the circles representcomposition number of the circle.

The first composition consists of 88% by weight of SiO₂ and 12% byweight of B₂ O₃, the third composition consists of 82% by weight of SiO₂and 18% by weight of B₂ O₃, the tenth composition consists of 84% byweight of SiO₂, 10% by weight of B₂ O₃, and 6% by weight of R₂ O, theeleventh composition consists of 90% by weight of SiO₂, 5% by weight ofB₂ O₃, and 5% by weight of R₂ O, and the fourth composition consists of89% by weight of SiO₂, 10% by weight of B₂ O₃, and 1% by weight of R₂ O,respectively based on 100% by weight of the all components of SiO₂, B₂O₃, and R₂ O.

In the area described above in FIG. 1, a composition included in an areadefined with five lines of a line connecting the point of fourthcomposition and a point of fifth composition, a line connecting thepoint of fifth composition and a point of ninth composition, a lineconnecting the point of ninth composition and the point of tenthcomposition, the line connecting the point of tenth composition and thepoint of eleventh composition, and the line connecting the point ofeleventh composition and the point of fourth composition (the areaincludes the lines) is more preferable.

The fifth composition consists of 87% by weight of SiO₂, 11.5% by weightof B₂ O₃, and 1.5% by weight of R₂ O, and the ninth composition consistsof 84.7% by weight of SiO₂, 10.8% by weight of B₂ O₃, and 4.5% by weightof R₂ O.

In addition to the composition mentioned above, glass having acomposition containing 90% or less of Al₂ O₃ to molar amount of R₂ Oadditionally is more preferable, and 1 to 4% by weight of ZnO to thetotal weight of glass may be contained additionally.

For the component ratio of glass and filler, inclusion of 60 to 95% byvolume of glass and 40 to 5% by volume of filler to the total 100% byvolume of glass and filler is preferable.

The triangular composition diagram is a diagram for representing thecomposition of three component system using triangular coordinate. In atriangular diagram, the vertexes of a regular triangle (referred as toA, B, and C) represents pure substances of three componentsrespectively, a point (including the place on the sides) in the regulartriangle represents a composition comprising at least one component ofthe three. The proportional length of segmental lines drawnperpendicularly from a point P in a triangular diagram which representsa corresponding composition to the opposite sides of each vertexrepresents the proportion of each component contained in thecomposition. That is, the length of a perpendicular-h drawn from thepoint P to the opposite side-a of the vertex A represents the proportionof the component of A. To obtain the length of a segmental line-h, aline is drawn from the point P perpendicularly to the segmental line-hto intersect with the side on which a percentage (or fraction) scale ofcomponent of A is marked, and the scaled value is read at theintersection.

Each component of glass is converted to oxides respectively. That is,the amount of SiO₂ component means the amount which is determined byconverting the amount of silicon contained in a glass to the amount ofsilicon dioxide (SiO₂), the amount of B₂ O₃ means the amount which isdetermined by converting the amount of boron contained in a glass to theamount of boron oxide (B₂ O₃), the amount of R₂ O component means theamount which is determined by converting the amount of alkali metalcontained in a glass to the amount of alkali metal oxide (R₂ O), theamount of Al₂ O₃ means the amount which is determined by converting theamount of aluminum contained in a glass to the amount of aluminum oxide(Al₂ O₃), and the amount of ZnO component means the amount which isdetermined by converting the amount of zinc contained in glass to theamount of zinc oxide (ZnO).

One example of a process for manufacturing circuit substrate inaccordance with the present invention is shown schematically in FIG. 2.The manufacturing process shown in FIG. 2 comprises;

(1) a slurry process in which a glass ceramic composition comprisingglass and filler, organic binder, and solvent are mixed in a ball mill 1to prepare slurry as shown in FIG. 2(a),

(2) a green sheet making process in which slurry 2 is formed into sheetusing the casting machine 3 to prepare green sheet 4 as shown in FIG.2(b),

(3) a punching process for punching through holes 51 on the green sheet4 using the punch 5 as shown in FIG. 2(c),

(4) a printing process in which conducting paste 7 placed on the greensheet 4 is filled in through holes 51 of the green sheet 4 using asqueegee 6 to form via holes 53 and conductive paste is printed on thegreen sheet surface to form wiring 52 as shown in FIG. 2(d),

(5) a laminating process for laminating and bonding a plurality of greensheets 4 having via holes 53 and wiring 52 obtained in the process inFIG. 2(d) to form a green sheet laminate 41 as shown in FIG. 2(e),

(6) a binder removing process for removing binder by heating theobtained green sheet laminate 41 at 700 to 880° C. in the electricfurnace 8 and a sintering process for sintering the laminate at atemperature of 900 to 1,050° C. as shown in FIG. 2(f), wherein theseprocesses are applied in the order as described hereinabove.

Glass ceramic composition constituting green sheet of the presentinvention (namely used in the slurry process) is a composite materialcomprising glass particles and filler particles, the glass in suchcomposition is softened and fluidized by heating during heat treatment,and the contact between glass particles increase to reduce the surfacearea of glass particles, namely to cause the mutual sintering of glassparticles. The temperature at which glass is softened and fluidized andsintered depends on softening point of the glass, the amount of fillermixed with the glass particle, and the particle size of the glassparticle and filler particle. Generally, the more amount of filler makesthe sintering of glass particle more difficult because filler obstructsthe mutual sintering of glass particles.

As described hereinabove, it is preferable that sintering of glassparticle is prevented during heat treatment for burning organic bindercontained in green sheet. The more addition of filler is examined. Theexcessive addition of filler causes the difficulty in compact sinteringof glass. Heat treatment temperature for compact sintering is limited toa temperature of 1,050° C. or below slightly below the melting point ofcopper of 1,083° C., in the case that glass is sintered under suchcondition, prolonged sintering and pressurized sintering are applied.However, these heat treatment conditions are not preferable forproduction of multilayer ceramic circuit substrate from the view pointof productivity.

As glass component to be contained in glass ceramic composition formultilayer ceramic circuit substrate, borosilicate glass, typicallyPyrex glass (brand name of Corning Co.), is used in favor of propertiesrequired for substrate such as thermal expansion coefficient andrelative dielectric constant. Pyrex glass composition consists of 81% byweight of SiO₂, 12% by weight of B₂ O₃, 4% by weight of Na₂ O, and 3% byweight of Al₂ O₃, and has the softening point of 821° C., Pyrex glass isone of commercially available borosilicate glasses with highestsoftening point. The production cost of a borosilicate glass with highersoftening point than Pyrex is high, and it is difficult to getcommercially available mass-produced glass with such high softeningpoint.

The inventors of the present invention have studied the manufacturing ofmultilayer ceramic substrate using Pyrex glass, and found that thesintering of glass particles proceeded during binder removing process(heat treatment at 700 to 880° C. in a non-oxidative atmosphere) whenonly a small amount of filler was added because the softening point ofPyrex was too low, residue of organic binder was trapped in the glass tocause the incomplete removal of organic binder. On the other hand, whenthe amount of filler was increased to 50% or more by volume, sinteringof glass particles was suppressed and organic binder was removed easily.However, the much amount of filler obstructed the compact sintering, andit took time as long as 10 hr or longer in spite of high sinteringtemperature at 1,050° C. The softening point lower than 850° C. is notpreferable because of too easy sintering of glass particles, and on theother hand, the softening point higher than 1,100° C. is also notpreferable because of difficulty in compact sintering under a sinteringtemperature at 1,050° C. or lower.

Glass contained in ceramic composition of the present invention has asoftening point of as high as 850 to 1,100° C. Therefore, in the case ofgreen sheet which utilizes ceramic composition of the present invention,the sintering of glass particles will not proceed during binder removingprocess (heat treatment at 700 to 880° C. in a non-oxidativeatmosphere), and even when water soluble organic binder which is notreadily thermally decomposable is used, residue of organic binder is nottrapped in the glass, and the binder removal is easy. In addition, greensheet prepared using glass ceramic composition of the present inventionis compactly sintered within a short time (only 2 hr) at a sinteringtemperature of 1,050° C. or lower in the compact sintering process.

Borosilicate glass of the invention has a small relative dielectricconstant, the small relative dielectric constant facilitates the fastsignal transmission, the facilitation is advantageous for multilayercircuit substrate. Borosilicate glass of the invention has a smallthermal expansion coefficient, the thermal expansion coefficient of theborosilicate glass is equalized to that of silicon by mixing withfiller, and has excellent water resistance which results in nocrystallization of boric acid crystal on green sheet and lead toenhanced productivity. Glass ceramic composition of the presentinvention is preferable also because of no crystallization ofcrystobalite crystal from borosilicate glass when the glass isheat-treated as described above. The thermal expansion coefficient ofsilicon is 3.0×10⁻⁶ ° C., and that of sintered glass ceramics ispreferably 2.0 to 4.0×10⁻⁶ ° C.

Filler added to glass of the present invention is contained as particlesdispersed in glass matrix after sintering, and has preferable effectssuch as;

(a) increase in mechanical strength of glass ceramics composite,

(b) equalization of thermal expansion coefficient of glass ceramicscomposite to that of silicon, and

(c) suppression of crystobalite crystallization from borosilicate glasswhen heat-treated. As described hereinbefore, high strength and lowrelative dielectric constant are desirable for glass ceramics composite.Alumina filler exhibits the advantages of (a) and (c), mullite andcordierite exhibit the advantages of (a), (b), and (c), and quartz glassexhibits the advantages of minimization of relative dielectric constant.In the present invention, these fillers are single materials or mixturematerials of those fillers.

The glass composition of the present invention has been determined byexperimental research from the view point of properties for excellentglass material such as softening point, water resistance, thermalexpansion coefficient, crystallization of crystobalite crystal, andrelative dielectric constant as described hereinbefore.

In the triangular composition diagram of SiO₂ --B₂ O₃ --R₂ O systemshown in FIG. 1, the first composition consists of 88% of SiO₂ and 12%of B₂ O₃, the third composition consists of 82% of SiO₂ and 18% of B₂O₃, the tenth composition consists of 84% of SiO₂, 10% of B₂ O₃, and 6%of R₂ O, the eleventh composition consists of 90% of SiO₂, 5% of B₂ O₃,and 5% of R₂ O, and the fourth composition consists of 89% of SiO₂, 10%of B₂ O₃, and 1% of R₂ O respectively in % by weight, the first glasscomposition area in accordance with the present invention is an areadefined with five straight lines, namely a line connecting a point offirst composition and a point of third composition, a line connectingthe point of third composition and a point of tenth composition, a lineconnecting the point of tenth composition and a point of eleventhcomposition, a line connecting the point of eleventh composition and apoint of fourth composition, and a line connecting the point of fourthcomposition and the point of first composition (the area includes thelines).

The softening point of glass included in the area ranges from 850 to1,100° C., the water resistance is in a practical level, and the thermalexpansion coefficient is adjustable to that of silicon by adding filler.SiO₂ and B₂ O₃ form network structure of glass, the increase of SiO₂content raises the softening point and improves the water resistance,and to the contrary, the increase of B₂ O₃ content lowers the softeningpoint and reduces the water resistance. R₂ O functions as networkmodifier, the increase of R₂ O lowers the softening point and improvesthe water resistance of B₂ O₃ in a certain composition area.

Glass having a composition rich in SiO₂ in area above the linesconnecting the first composition, the fourth composition, and theeleventh composition exhibits excessively high softening point, it isnot preferable to accomplish the object of the present invention. Glasshaving a composition containing more R₂ O than composition on the lineconnecting the eleventh composition and the tenth composition exhibitsexcessively high thermal expansion coefficient, it is not preferable toaccomplish the object of the present invention. The compositioncontaining less SiO₂ than composition on the line connecting the thirdcomposition and the tenth composition exhibits excessive B₂ O₃ elution,it is not preferable to accomplish the object of the present invention.

In the triangular composition diagram of SiO₂ --B₂ O₃ --R₂ O systemshown in FIG. 1, the fourth composition consists of 89% of SiO₂, 10% ofB₂ O₃, and 1% of R₂ O, the fifth composition consists of 87% of SiO₂,11.5% of B₂ O₃, and 1.5% of R₂ O, the ninth composition consists of84.7% of SiO₂, 10.8% of B₂ O₃, and 4.5% of R₂ O, the tenth compositionconsists of 84% of SiO₂, 10% of B₂ O₃, and 6% of R₂ O, and the eleventhcomposition consists of 90% of SiO₂, 5% of B₂ O₃, and 5% of R₂ Orespectively in % by weight, the second glass composition area inaccordance with the present invention is an area defined with fivestraight lines, namely a line connecting a point of fourth compositionand a point of fifth composition, a line connecting the point of fifthcomposition and a point of ninth composition, a line connecting thepoint of ninth composition and a point of tenth composition, a lineconnecting the point of tenth composition and a point of eleventhcomposition, and a line connecting the point of eleventh composition andthe point of fourth composition (the area includes the lines).

Glass having a composition included in this area exhibits especiallyhigh water resistance (namely reduced B₂ O₃ elution) among glassesincluded in the above mentioned first composition area. Glass having acomposition included in the second composition area is more preferablebecause green sheet prepared using the glass can be stored and handledin any atmosphere without restriction.

The third composition area of glass in accordance with the presentinvention is an area which is obtained by adding Al₂ O₃ in an amount of90% or less based on molar amount of R₂ O contained in glass having acomposition included in the second composition area. R represents alkalimetals such as Na and K. Glass having a composition included in thethird composition area is most preferable because the existence of Al₂O₃ suppresses the crystallization of crystobalite crystal from glasswhen the glass is heat-treated. Glass containing Al₂ O₃ in an amountexceeding 90% based on molar amount of R₂ O contained in the glass isnot preferable because the softening point of the glass exceeds 1,100°C.

The mechanism of suppression of crystobalite crystallization by additionof Al₂ O₃ is presumed as described herein under.

Glass of SiO₂ --B₂ O₃ --R₂ O system has random-network structureconstituted with Si atom coordinated with four oxygen atoms, B atomcoordinated with three oxygen atoms, and B atom coordinated with fouroxygen atoms as shown in FIG. 7(a). B atom coordinated with four oxygenatoms attracts R ion for charge compensation. When Al₂ O₃ is added tothe three component system, B atom coordinated with four oxygen atomschanges to B atom coordinated with three oxygen atoms and Al atom iscoordinated with four oxygen atoms and attracts R ion as shown in FIG.7(b). B atom coordinated with three oxygen atoms facilitates more easilythe elution of B₂ O₃ than B atom coordinated with four oxygen atoms. Theaddition of Al₂ O₃ causes the slight increase in elution of B₂ O₃, theincrease is presumably attributed to the change of B atom coordinatedwith four oxygen atoms to B atom coordinated with three oxygen atoms.

The comparison of heat treatment of glass with and without Al₂ O₃addition is examined. As described herein above, glass without Al₂ O₃addition contains B atom coordinated with four oxygen atoms. As shown inFIG. 8(a), B--O bonding and attractive bonding to R ion are relativelyweak in the structure of B atom coordinated with four oxygen atoms,therefore the bondings are broken in high temperature atmosphere and Siwith non-bridging oxygen is easily formed presumably. The Si withnon-bridging oxygen causes the reduced viscosity in high temperatureatmosphere and crystobalite crystal crystallizes easily. On the otherhand, in the case of glass with Al₂ O₃ addition, Al atom coordinateswith four oxygen atoms. As shown in FIG. 8(b), Al--O bonding andattractive bonding to R ion are relatively strong in the structure of Alatom coordinated with four oxygen atoms, the bonding is not easilybroken in high temperature atmosphere, and crystobalite crystalcrystallizes not easily. However, the addition of excessive amount ofAl₂ O₃ results in excessively high softening point of glassdisadvantageously.

The fourth composition area of glass in accordance with the presentinvention is a composition area obtained by adding 1 to 4% by weight ofZnO in a glass in the first to third composition areas. Glass in thefourth composition area is featured by reduced B₂ O₃ elution and lowrelative dielectric constant. When addition of ZnO is less than 1% byweight, the effect of the addition is not remarkable, and the additionof ZnO in an amount of more than 4% by weight causes disadvantageouslythe crystal crystallization from glass when heat-treated.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a triangular composition diagram of SiO₂ --B₂ O₃ --R₂ O systemfor representing the composition area of glass in accordance with thepresent invention.

FIG. 2 is a schematic diagram for illustrating manufacturing process ofmultilayer circuit substrate.

FIG. 3 is a triangular composition diagram of SiO₂ --B₂ O₃ --K₂ O threecomponent system for illustrating B₂ O₃ elution curve.

FIG. 4 is a graph for description of the relationship between B₂ O₃elution and Al₂ O₃ /K₂ O molar ratio for SiO₂ --B₂ O₃ --K₂ O--Al₂ O₃glass.

FIG. 5 is a graph for description of the relationship between softeningpoint and Al₂ O₃ /K₂ O molar ratio for SiO₂ --B₂ O₃ --K₂ O--Al₂ O₃glass.

FIG. 6 is a graph for description of the relationship betweencrystobalite crystallization and Al₂ O₃ /K₂ O molar ratio for SiO₂ --B₂O₃ --K₂ O--Al₂ O₃ glass.

FIG. 7 includes FIG. 7(a) and FIG. 7(b). FIG. 7(a) is a schematicdiagram for illustrating a structural model of SiO₂ --B₂ O₃ --R₂ Oglass, and FIG. 7(b) is a schematic diagram for illustrating thestructural change when Al₂ O₃ is added to SiO₂ --B₂ O₃ --R₂ O glass.

FIG. 8 includes FIG. 8(a) and FIG. 8(b). FIG. 8(a) is a schematicdiagram for illustrating the structural change when SiO₂ --B₂ O₃ --R₂ Oglass is heated at high temperature and FIG. 8(b) is a schematic diagramfor illustrating the structural change when SiO₂ --B₂ O₃ --R₂ O--Al₂ O₃glass is heated at high temperature.

FIG. 9 is a graph for description of the relationship between B₂ O₃elution and ZnO content for SiO₂ --B₂ O₃ --ZnO glass.

FIG. 10 is a graph for description of the relationship between binderremoving temperature and binder removing time.

FIG. 11 is a graph for description of the relationship between softeningpoint of glass and filler content required for binder removal.

FIG. 12 is a set of curves for description of the relationship betweencompact sintering temperature and filler content, and softening pointfor glass-filler composition.

FIG. 13 is a set of curves for description of sintering compaction forglass-filler composition.

FIG. 14 is a graph for description of the relationship between bendingstrength and filler content for glass-filler sintered composition.

FIG. 15 is a sectional view of a multilayer circuit substrate.

FIG. 16 is a sectional view of a multilayer circuit substrate mountedwith LSIs and I/O pins.

FIG. 17 is a partial sectional view of an instruction processor module.

FIG. 18 is a diagram for illustrating the system structure of anelectronic computer.

FIG. 19 is a triangular composition diagram of SiO₂ --B₂ O₃ --Na₂ Othree component system with B₂ O₃ elution curves.

DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS

Preferred embodiments of the present invention will be described indetail referring to the drawings hereinafter.

Symbols and description used in the drawings are listed herein under.

1 . . . ball mill, 2 . . . slurry, 3 . . . casting machine, 4 . . .green sheet, 5 . . . punch, 6 . . . squeegee, 7 . . . paste, 8 . . .furnace, 9, 51 . . . via holes, 10, 52 . . . circuit lines, 11 . . .LSI, 12 . . . I/O pin, 13, 14 . . . connecting solder, 15 . . .micro-fin, 16 . . . water cooling jacket, 17 . . . multilayer circuitsubstrate, 18 . . . connector, 181 . . . main memory unit, 182 . . .extended memory unit, 183 . . . system controller, 184 . . .input/output processor, 185 . . . instruction processor.

EXAMPLE 1

(1) Preparation of glass

Silicic acid anhydride (SiO₂), boric acid (H₃ BO₃), and potassiumcarbonate (K₂ CO₃) materials were weighed in various combinations inamount for preparation of various compositions so as that SiO₂ --B₂ O₃--R₂ O glasses with desired compositions would be obtained finally, andthe materials were mixed in a ball mill to obtain mixed powder. Themixed powder was put into a platinum crucible or a platinum-rhodiumcrucible, the crucible was placed in an electric furnace, heated for 1hr at a temperature which melted the mixed powder in the crucible, takenout from the electric furnace, and soaked in water to obtain a glassblock of borosilicate glass in the form of amorphous. The glass blocktaken out from the crucible was partially used as samples formeasurement of thermal expansion coefficient and partially pulverized toprepare glass powder sample. For some of prepared samples (samples ofthe first composition to eleventh composition), composition, and heatingtemperature, B₂ O₃ elution, softening point, thermal expansioncoefficient, relative dielectric constant, and crystobalitecrystallization of glasses, prepared using the samples having variouscompositions, are listed in Table 1. Compositions of the firstcomposition to eleventh composition are plotted in FIG. 1 with smallcircles having the center at the point of the composition respectively.A numeral indicated in the circle represents the composition numberrespectively.

    __________________________________________________________________________    SiO.sub.2 --B.sub.2 O.sub.3 --R.sub.2 O glass compositions and properties     (Table 1)                                                                                                 Thermal                                                          Heating                                                                           B.sub.2 O.sub.3                                                                   Softening                                                                          expansion                                                                           Relative                                    Composition                                                                         Composition (wt %)                                                                     temp.                                                                             elution                                                                           point                                                                              coefficient                                                                         dielectric                                                                         Crystobalite                           number                                                                              SiO.sub.2                                                                        B.sub.2 O.sub.3                                                                  K.sub.2 O                                                                        (° C.)                                                                     (mg/m.sup.2)                                                                      (° C.)                                                                      (× 10.sup.-6 /° C.)                                                    constant                                                                           crystallization                        __________________________________________________________________________    1     88 12 0  1700                                                                              6   1100 1.7   3.8  -                                      2     85 15 0  1700                                                                              10  1000 1.8   3.8  -                                      3     82 18 0  1700                                                                              20   850 1.8   3.8  -                                      4     89 10 1  1700                                                                              2.0 1100 2.1   4.0  +                                      5     87 11.5                                                                             1.5                                                                              1700                                                                              2.0  950 2.2   4.1  +                                      6     85 13 2  1700                                                                              4.0  880 2.3   4.2  ++                                     7     88 9  3  1700                                                                              0.7 1000 2.5   4.4  ++                                     8     87 9  4  1700                                                                              0.7  900 2.8   4.6  ++                                     9     84.7                                                                             10.8                                                                             4.5                                                                              1650                                                                              2.0  860 2.8   4.7  ++                                     10    84 10 6  1650                                                                              2.0  850 3.8   5.0  ++                                     11    90 5  5  1700                                                                              0.5 1100 3.7   4.8  ++                                     __________________________________________________________________________     -: No                                                                         +: Slightly                                                                   ++: Significantly                                                        

(2) Evaluation of water resistance of glass powder

The water resistance of obtained borosilicate glass were evaluated asdescribed below. 1 g of glass powder and 150 g of pure water were putinto a 300 ml Teflon beaker (brand name of DuPont Co.), the beaker wascovered with polyethylene film and kept at 90° C. in an oven with athermostat for eight hours. The sample water was taken out, centrifugedto obtain supernatant, the supernatant was filtered to obtain filtrate,the filtrate was used as sample solution. B atom eluted in the filtratewas detected and determined by ICP (Inductively Coupled Plasma) emissionspectral analysis. The specific surface area of glass was determined byBET (Brunauer-Emmett-Teller) method, and B₂ O₃ elution per unit surfacearea of glass powder was calculated from the determined amount of B atomand the specific surface area of glass. The result is shown in FIG. 3.For glasses of the first composition to eleventh composition, determinedB₂ O₃ elution is listed also in Table 1. The plot in FIG. 3 includes theexperimental result on glasses having compositions other than thatlisted in Table 1.

In FIG. 3, a line-a is the constant B₂ O₃ elution curve of 20 mg/m², aline-b is the constant B₂ O₃ elution curve of 10 mg/m², a line-c is theconstant B₂ O₃ elution curve of 6 mg/m², a line-d is the constant B₂ O₃elution curve of 4 mg/m², a line-e is the constant B₂ O₃ elution curveof 2 mg/m², a line-f is the constant B₂ O₃ elution curve of 0.7 mg/m²,and a line-g is the constant B₂ O₃ elution curve of 0.5 mg/m². As shownin FIG. 3, in the case of glass composition containing about 3% or lessby weight of K₂ O as glass component, B₂ O₃ elution decreases with theincreasing of K₂ O component, in the case of glass compositioncontaining about 3% or more by weight of K₂ O, B₂ O₃ elution increaseswith the increasing of B₂ O₃.

(3) Evaluation of water resistance of green sheet

Green sheets were prepared using powder samples of SiO₂ --B₂ O₃ --K₂ Oglass having various compositions, green sheet samples were placed in aroom temperature atmosphere of 55 to 92% relative humidity conditions,and the crystallization of boric acid was observed.

A green sheet of glass composition with B₂ O₃ elution of 20 mg/m² (thirdcomposition in Table 1, shown as a1 in FIG. 3) did not crystallizesignificant boric acid crystal during exposure of one month inatmosphere of 55% relative humidity, but crystallized significant boricacid crystal during exposure of one week in atmosphere of 75% or higherhumidity conditions.

In the cases in which five glass compositions with B₂ O₃ elution of 2mg/m² (fourth composition in Table 1 (shown as e1 in FIG. 3), fifthcomposition (shown as e2 in FIG. 3), ninth composition (shown as e3 inFIG. 3), tenth composition (shown as e4 in FIG. 3), and the compositionshown as e5 in FIG. 3) were used, the exposure of two months inatmosphere of 75 to 92% relative humidity resulted in no significantcrystallization of boric acid crystal.

Accordingly, the use of glass composition with B₂ O₃ elution of 20 mg/m²or less allows the storage and handling in less-restricted atmosphere,and especially the use of glass composition with B₂ O₃ elution of 2mg/m² or less allows preferably the storage and handling in essentiallynot restricted atmosphere. A glass composition with B₂ O₃ elution of 20mg/m² is used practically though the atmosphere for storage and handlingis limited to a certain degree, and used in the present invention ifother properties are preferable.

(4) Evaluation of thermal expansion coefficient

Using prepared borosilicate glass samples, a glass block was formed intoa stick sample with a diameter of 4 mm and length of 15 mm, and thethermal expansion coefficient was measured in a temperature range from 0to 200° C. using a laser interferometry thermal expansion meter. Themeasured thermal expansion coefficient values of glasses of the firstcomposition to eleventh composition are listed in Table 1. The thermalexpansion coefficient of glasses of the first composition to theeleventh composition is as low as 4.0×10⁻⁶ /° C. or less for allcompositions, and it is obvious that the thermal expansion coefficientof glass can be adjusted easily to that of silicon by adding filler.

(5) Evaluation of softening point

Softening point was measured by conventional differential thermalanalysis using glass powder sample. The result of measurement is listedin Table 1 for the first composition to the eleventh composition. Thesoftening point of 850 to 1,100° C. is preferable. The softening pointof glasses of the first composition to eleventh composition is includedin this temperature range for all compositions, from the result listedin Table 1, it is obvious that these compositions are suitable for thepresent invention.

(6) Evaluation of crystobalite crystallization

1 g of glass powder was molded to prepare a disk sample with a diameterof 15 mm by conventional press method, and the disk was heat-treated at800° C. for 50 hr in an electric furnace to obtain a sintered disk. Forthe simulation of manufacturing condition for multilayer substrate, theheat treatment condition was employed. The sintered disk sample wassubjected to X-ray diffractometry to determine crystobalite crystal. Theresult of measurement is listed in Table 1 for all glass compositionsfrom the first to the eleventh. For all compositions, the crystobalitecrystallization is in a practically usable range, though somecrystobalite crystal is observed for K₂ O rich compositions of the sixthto eleventh.

(7) Evaluation of relative dielectric constant

10 g of glass powder sample was molded to prepare a disk sample with adiameter of 47 mm by conventional press method, and the disk sample washeat-treated at about 800° C. for 2 hr in an electric furnace to obtaina sintered disk sample. The sintered disk was processed to a disk with athickness of 0.5 mm, a Cr/Cu film was spattered on the both sides forserving as electrode, and the electric capacity was measured using a LCR(inductance capacitance resistance) meter (measuring frequency: 1 MHz,input signal level: 1 Vrms) to obtain the relative dielectric constant.The measurement result was listed in Table 1 for all compositions of thefirst to eleventh. The relative dielectric constant is preferably 5.0 orless for all compositions of the first to eleventh.

(8) Summary of evaluation

The experimental result described hereinbefore is summarized as follows.A glass with composition included in the area defined with five lines(the area includes the lines) connecting in the order the point of firstcomposition, the point of third composition, the point of tenthcomposition, the point of eleventh composition, the point of fourthcomposition, and the point of first composition, has a softening pointin a range from 850 to 1,100° C., a water resistance of practicallyusable level, and a thermal expansion coefficient of 4.0×10⁻⁶ /° C. orless which is adjustable to that of silicon by adding filler. Thecrystobalite crystallization and relative dielectric constant are in thepractically usable range.

On the other hand, a glass with composition in the area defined withfive lines (the area include the lines) connecting in the order from thepoint of fourth composition, the point of fifth composition, the pointof ninth composition, the point of tenth composition, the point ofeleventh composition, and to the point of fourth composition has the B₂O₃ elution of as particularly low as 2 mg/m² or less, the low elutionallows preferably the storage and handling in essentially not restrictedatmosphere.

EXAMPLE 2

SiO₂ --B₂ O₃ --Na₂ O glasses with various compositions were prepared inthe same manner as described in Example 1 excepting that sodiumcarbonate (Na₂ CO₃) was used instead of potassium carbonate (K₂ CO₃).The various properties of these glass samples were evaluated in the samemanner as described in Example 1, it was found that these samples hadheating temperature, softening point, thermal expansion coefficient, andrelative dielectric constant suitable for the object of the presentinvention as described for K₂ O-containing glass in Example 1. From theexperimental result of water resistance and crystobalitecrystallization, it was found that following properties were specific toNa₂ O-containing glass.

The B₂ O₃ elution property of SiO₂ --B₂ O₃ --Na₂ O glass is shown inFIG. 19. In FIG. 19, a line-a is the constant B₂ O₃ elution curve of 20mg/m², a line-b is the constant B₂ O₃ elution curve of 10 mg/m², aline-c is the constant B₂ O₃ elution curve of 6 mg/m², a line-d is theconstant B₂ O₃ elution curve of 4 mg/m², and a line-e is the constant B₂O₃ elution curve of 2 mg/m².

In the case of B₂ O₃ elution curves for SiO₂ --B₂ O₃ --K₂ O glass, theelution curves are arranged in parallel each other, but in the case ofB₂ O₃ elution curves for SiO₂ --B₂ O₃ --Na₂ O glass, the elution curvesare disordered (FIG. 19). The disorder is presumably attributed to theproperty of phase separation of Na₂ O-containing glass, that is, thedisposition of the phase to separate to two different glass phases withdifferent compositions. The crystallization of crystobalite crystal ofNa₂ O glass when heat-treated is larger than that of K₂ O glass, that istwo times that of K₂ O glass, but the crystallization is not so seriousas to prevent the practical use. Accordingly, both Na₂ O glass and K₂ Oglass can be used for the present invention, but K₂ O glass of reducedphase separation and crystobalite crystallization is more preferablyused.

EXAMPLE 3

Glass which contains Al₂ O₃ in addition to SiO₂, B₂ O₃, and R₂ O isexamined. In this example, as an example of composition included in thearea defined with five lines (the area includes the lines) connecting inthe order from the point of first composition, the point of thirdcomposition, the point of tenth composition, the point of eleventhcomposition, the point of fourth composition, to the point of firstcomposition in the triangular composition diagram for SiO₂ --B₂ O₃ --R₂O system, a mixed powder of silicic acid anhydride, boric acid, andpotassium carbonate prepared as to contain 86.6% by weight of SiO₂, 9.3%by weight of B₂ O₃, and 4.1% by weight of K₂ O (approximately similar tothe eighth composition) was used. Alumina (Al₂ O₃) powder was added tothe mixed powder additionally in various amounts so as to preparecompositions listed in Table 2, the powder was mixed in a ball mill toobtain mixed powders having compositions of the twelfth composition tosixteenth composition listed in Table 2. Using these mixed powder,sample glasses were prepared in the same manner as described in Example1, and the properties of these samples were evaluated. The ratio (molarratio) of Al₂ O₃ to R₂ O (in this example K₂ O) for each composition,heating temperature, measured values of thermal expansion coefficient,and relative dielectric constant are listed in Table 2. It is obviousfrom the experimental result that the increase of Al₂ O₃ content causesessentially no change in the thermal expansion coefficient and relativedielectric constant, and these measured values are included in thepreferable range.

The effect of Al₂ O₃ addition on the B₂ O₃ elution is examined. The B₂O₃ elution of glass of the eighth

    __________________________________________________________________________    SiO.sub.2 --B.sub.2 O.sub.3 --K.sub.2 O--Al.sub.2 O.sub.3 glass               compositions and properties (Table 2)                                                             Al.sub.2 O.sub.3                                                                      Thermal                                                               K.sub.2 O                                                                         Heating                                                                           expansion                                                                           Relative                                    Composition                                                                         Composition (WT %)                                                                          (molar                                                                            temp.                                                                             coefficient                                                                         dielectric                                  number                                                                              SiO.sub.2                                                                        B.sub.2 O.sub.3                                                                   K.sub.2 O                                                                        Al.sub.2 O.sub.3                                                                  ratio)                                                                            (° C.)                                                                     (× 10.sup.-6 /° C.)                                                    constant                                    __________________________________________________________________________    12    85.5                                                                             9.2 4.0                                                                              1.3 0.3 1700                                                                              2.8   4.7                                         13    84.7                                                                             9.1 4.0                                                                              2.2 0.5 1700                                                                              2.8   4.7                                         14    84.0                                                                             9.0 4.0                                                                              3.0 0.7 1700                                                                              2.8   4.7                                         15    83.6                                                                             9.0 4.0                                                                              3.4 0.8 1700                                                                              2.7   4.7                                         16    83.2                                                                             8.9 4.0                                                                              3.9 0.9 1750                                                                              2.7   4.8                                         __________________________________________________________________________

composition, which contains no Al₂ O₃, and glasses of the twelfth to thesixteenth composition are shown in FIG. 4. In FIG. 4, the content of Al₂O₃ is normalized to the molar ratio to K₂ O content in glasscomposition. A number in a small circle represents the glass compositionnumber. From FIG. 4, it is obvious that the B₂ O₃ elution increases withthe increasing of Al₂ O₃ content. However, the increased Al₂ O₃ contentof as large as 90% to K₂ O molar content results in the B₂ O₃ elution ofonly 1.6 mg/m², therefore the increase of B₂ O₃ elution due to additionof Al₂ O₃ causes no problem.

The effect of Al₂ O₃ addition on the softening point is examined. Thesoftening point of glass with compositions of the eighth, and thetwelfth to the sixteenth is shown in FIG. 5. In FIG. 5, the content ofAl₂ O₃ is normalized to the molar ratio to K₂ O content in glasscomposition in the same manner as described in FIG. 4. A number in asmall circle represents the glass composition number. From FIG. 5, it isobvious that Al₂ O₃ content of exceeding 90% to K₂ O molar contentresults in the softening point of as high as exceeding 1,100° C.Therefore, such high Al₂ O₃ content is not preferable.

Finally, the effect of Al₂ O₃ addition on the crystobalitecrystallization (represented by diffraction intensity from crystobalitecrystal) is examined. The crystobalite crystallization of glasses withthe eighth composition, and the twelfth composition to the sixteenthcomposition is shown in FIG. 6. The content of Al₂ O₃ is normalized tothe molar ratio to K₂ O content in glass composition in the same manneras used in FIG. 4. A number in a small circle represents the glasscomposition number. From FIG. 6, it is obvious that the increased Al₂ O₃content results in the reduced crystobalite crystal X-ray diffractionintensity (namely amount of crystallized crystobalite crystal). In thecase of Al₂ O₃ content of 80% or more to K₂ O molar content, nocrystobalite crystal crystallizes when heat-treated.

Crystobalite crystal has a transition point at about 230° C. at whichthe crystal phase transition occurs accompanying drastic volume change,the volume change causes cracking of substrate, therefore thecrystallization is not preferable. However if filler material exhibitsthe effect of preventing the crystallization of crystobalite crystal inborosilicate glass during the reaction between glass and filler expectedwhen sintering, actually the crystobalite crystal may not crystallizefrom glass-filler composite even when the glass-filler composite issubjected to the condition which will cause the crystallization ofcrystobalite crystal from glass composition without filler. Therefore,when a substrate is manufactured using a composite comprising glass andfiller, the glass with a composition which causes the crystallization ofcrystobalite crystal from the glass containing no filler is alsosuitable for the present invention if the composite comprising the glassand filler causes no crystallization of crystobalite crystal. Glasseswith the eighth composition and the twelfth composition can be used forthe present invention. A glass which causes no crystallization ofcrystobalite crystal using the glass solely without filler whenheat-treated is advantageously used because it allows the widerselection of fillers and stabilizes the manufacturing process.

From the experimental result described herein above, it is obvious thatglass contains preferably Al₂ O₃ in a molar ratio of 90% or less to R₂O. It is obvious that the addition of Al₂ O₃ in a molar ratio of 50% ormore to R₂ O suppresses significantly the crystallization ofcrystobalite crystal and 80% or more suppresses completely thecrystallization preferably.

EXAMPLE 4

The addition of ZnO in addition to SiO₂, B₂ O₃, R₂ O, and Al₂ O₃ (namelySiO₂ --B₂ O₃ --R₂ O--Al₂ O₃ --ZnO glass) is examined. Silicic acidanhydride boric acid, potassium carbonate, sodium carbonate, alumina,and zinc oxide (ZnO) powder were weighed so as to prepare glasscompositions listed in Table 3, mixed in a ball mill, and mixed powderswith the seventeenth composition to twenty-third composition listed inTable 3 were obtained. Using the mixed powders, glasses were prepared inthe same manner as used in Example 1 and properties were evaluated. Theheating temperature, B₂ O₃ elution, softening point, thermal expansioncoefficient, relative dielectric constant, and crystobalitecrystallization were measured on these compositions and the result islisted in Table 3.

                                      TABLE 3                                     __________________________________________________________________________    SiO.sub.2 --B.sub.2 O.sub.3 --R.sub.2 O--Al.sub.2 O.sub.3 --ZnO glass         compositions and properties                                                                                      Thermal                                    Com-                  Heating                                                                           B.sub.2 O.sub.3                                                                   Softening                                                                          expansion                                                                           Relative                             position                                                                          Composition (wt %)                                                                              temp.                                                                             elution                                                                           point                                                                              coefficient                                                                         dielectric                                                                         Crystobalite                    No. SiO.sub.2                                                                        B.sub.2 O.sub.3                                                                  R.sub.2 O                                                                          Al.sub.2 O.sub.3                                                                  ZnO                                                                              (° C.)                                                                     (mg/m.sup.2)                                                                      (° C.)                                                                      (× 10.sup.-6 /° C.                                                     constant                                                                           crystallization                 __________________________________________________________________________    17  82.0                                                                             13.0                                                                             Na.sub.2 O = 1                                                                     1.0 2.0                                                                              1700                                                                              1.9  900 2.0   4.2  +                                         K.sub.2 O = 1                                                       18  84.0                                                                             11.0                                                                             Na.sub.2 O = 1                                                                     1.0 2.0                                                                              1700                                                                              1.2  950 2.3   4.2  +                                         K.sub.2 O = 1                                                       19  86.0                                                                             9.0                                                                              Na.sub.2 O = 1                                                                     1.0 2.0                                                                              1700                                                                              0.6 1000 2.0   4.2  +                                         K.sub.2 O = 1                                                       20  85.0                                                                             8.0                                                                              Na.sub.2 O = 1                                                                     3.0 2.0                                                                              1700                                                                              0.5 1060 2.3   4.3  -                                         K.sub.2 O = 1                                                       21  84.0                                                                             9.0                                                                              Na.sub.2 O = 1                                                                     3.0 2.0                                                                              1700                                                                              0.6 1040 2.3   4.3  -                                         K.sub.2 O = 1                                                       22  83.0                                                                             10.0                                                                             Na.sub.2 O = 1                                                                     3.0 2.0                                                                              1700                                                                              0.7 1020 2.2   4.3  -                                         K.sub.2 O = 1                                                       23  83.0                                                                             10.0                                                                             K.sub.2 O = 2                                                                      3.0 2.0                                                                              1700                                                                              0.7 1020 2.3   4.3  -                               __________________________________________________________________________     -: no  +: slightly  ++: significantly                                    

As obvious from Table 3, glasses with the seventeenth composition totwenty-third composition have reduced B₂ O₃ elution, thermal expansioncoefficient, and relative dielectric constant, these results arepreferable for the present invention. The softening point for allcompositions ranges preferably from 900 to 1,060° C. No or slightcrystobalite crystallization was observed for all compositions in favorof the present invention.

ZnO powder was added in various amounts to mixed powder material of thesecond composition (composition is listed in Table 1) to prepareglasses, and the B₂ O₃ elution was measured in the same manner asdescribed in Example 1. The relationship between ZnO content and B₂ O₃elution is shown in FIG. 9. It is obvious in FIG. 9 that the addition ofZnO reduces dramatically the B₂ O₃ elution. It is understandable fromthe experimental result that the addition of ZnO is preferable forpreparation of glass. As obvious in Table 3, SiO₂ --B₂ O₃ --Na₂ O--K₂O--Al₂ O₃ --ZnO glass is featured by low B₂ O₃ elution and low relativedielectric constant. The addition of ZnO in an amount of less than 1% byweight affects scarcely and the addition of ZnO in an amount of morethan 4% by weight causes the problem of crystallization from glass whenheat-treated. Accordingly, from the result of this example, it is foundthat the addition of ZnO in an amount of 1% or more by weight and 4% orless by weight is preferable.

EXAMPLES 5 TO 21, AND COMPARATIVE EXAMPLE 1

(1) Preparation of sintered ceramics

The effect of addition of fillers to glass compositions is examined.Glass powder of the fourteenth composition (listed in Table 2) forExamples 5 to 12 and Comparative Example 1, glass powder of the ninthcomposition (listed in Table 1) for Examples 13 to 15, glass powder ofthe nineteenth composition (listed in Table 3) for Example 16, glasspowder of the twenty-third composition (listed in Table 3) for Examples17 to 20, and glass powder of the first composition (listed in Table 1)for Example 21 were prepared. Filler powder was mixed in various amountsin the glass powders to obtain 18 ceramic composites listed in Table 4.The average particle size (diameter) of the glass powders was about 4microns and the average particle size of the filler was about 3 microns.Mullite (3Al₂ O₃.2SiO₂) was used as filler for Examples 1 to 11, 13 to15, 17 and 18, and Comparative Example 1, mullite and alumina (Al₂ O₃)were used for Example 12, alumina and cordierite (2MgO.2Al₂ O₃.5SiO₂)were used for Example 16, alumina was used for Examples 19 and 21, andalumina and quartz glass (SiO₂ glass) were used for Example 20.

100 parts by weight of obtained ceramic composition, about 14 parts byweight of water soluble organic binder containing modified acrylic resinas the main component, 75 parts by weight of water as solvent, and 0.3part by weight of ammonium acrylate salt dispersant were mixed in a ballmill to prepare slurry. Hitaloid 2713 (brand name of Hitachi ChemicalCo, Ltd.) was used as the water soluble binder because of excellentperformance in accuracy of hole position and environmental safety andhygiene.

Then, using obtained slurry, green sheet with a thickness of 0.2 mm andwidth of 450 mm was prepared by doctor blade method. The green sheet wascut to 150 mm square and 50 mm square pieces. On a green sheet of 150 mmsquare, holes (via hole) with a diameter of 0.1 mm were punched with a0.4 mm pitch. The holes were filled with copper paste by printingmethod, and copper paste was printed on the surface of green sheet toform a wiring pattern with a width of 0.08 mm by conventional method,then 4 to 50 green sheets were laminated by pressing at 130° C. for 10min under a pressure of 20 MPa to form green sheet laminate. 4 to 50green sheets of 50 mm square were laminated by pressing at 130° C. for10 min under a pressure of 20 MPa to form green sheet laminate withoutpunching and printing, the laminate was used as samples for measurementof strength, relative dielectric constant, and residual carbon.

Obtained green sheet laminate was placed in an electric furnace,atmosphere in which furnace is controllable, in an atmosphere ofsteam-nitrogen-hydrogen gas, the furnace temperature was raised from aroom temperature to 700 to 880° C. at a heating rate of

                                      TABLE 4                                     __________________________________________________________________________    Borosilicate glass-filler compositions and properties                                                                Thermal                                Glass       Glass                                                                             Filler composition (vol %)                                                                      Sintering                                                                          expansion                                                                           Bending                                                                           Relative                     composition content           Quartz                                                                            temp.                                                                              coefficient                                                                         strength                                                                          dielectric                   number      (vol %)                                                                           Mullite                                                                           Alumina                                                                            Cordierite                                                                         glass                                                                             (° C.)                                                                      (× 10.sup.-6 /°                                                        (MPa)                                                                             constant                     __________________________________________________________________________    Example 5                                                                           14    90  10  0    0    0    975 2.9   200 5.0                          Example 6                                                                           14    85  15  0    0    0    975 2.9   200 5.1                          Example 7                                                                           14    80  20  0    0    0   1000 3.0   200 5.2                          Example 8                                                                           14    75  25  0    0    0   1000 3.0   210 5.2                          Example 9                                                                           14    70  30  0    0    0   1020 3.1   220 5.3                          Example 10                                                                          14    65  35  0    0    0   1025 3.1   210 5.4                          Example 11                                                                          14    60  40  0    0    0   1050 3.2   200 5.5                          Example 1                                                                           14    55  45  0    0    0   1100 3.2   200 5.5                          Example 12                                                                          14    70  22  8    0    0   1020 3.6   210 5.4                          Example 13                                                                           9    80  20   0   0    0    900 3.0   200 5.3                          Example 14                                                                           9    70  30  0    0    0    950 3.1   200 5.4                          Example 15                                                                           9    60  40  0    0    0   1000 3.2   210 5.6                          Example 16                                                                          19    65   0  20   10   0   1000 3.1   240 5.1                          Example 17                                                                          23    75  25  0    0    0   1000 2.7   220 4.7                          Example 18                                                                          23    70  30  0    0    0   1020 2.8   230 4.8                          Example 19                                                                          23    75   0  25   0    0   1000 3.4   240 5.0                          Example 20                                                                          23    70   0  15   0    15  1020 3.0   200 4.6                          Example 21                                                                           1    95   0  5    0    0   1050 2.0   150 4.3                          __________________________________________________________________________

100° C./min, and maintained at the final temperature for 10 to 50 hr toremove binder until the residual carbon content was reduced to 200 ppmor less. After the binder removal, the furnace temperature was raised tothe sintering temperature listed in Table 4 at a heating rate of 100°C./hr, and maintained at the sintering temperature for 2 hr to completecompact sintering, and sintered sample was obtained.

The thermal expansion coefficient and relative dielectric constant ofobtained sintered ceramics (sintered laminate of green sheet of 50 mmsquare) were measured in the same manner as described in Example 1. Thebending strength of sintered samples was measured according to JISstandard (R1601), that is, the sintered ceramics was cut to specimenswith a length of 38 mm, width of 4 mm, and thickness of 3 mm, and thethree point bending test was carried out with a span of 30 mm. Themeasurement result is listed in Table 4.

The thermal expansion coefficient of sintered ceramic samples ofExamples 5 to 21 and Comparative Example 1 ranges from 2.0 to 3.6×10⁻⁶/° C., these values are comparable with thermal expansion coefficient ofsilicon (3.0×10⁻⁶ /° C.). The bending strength of sintered ceramics ofExamples 5 to 21 and Comparative Example 1 is 150 MPa or higher, thisvalue is enough for practical use. The sintering temperature forExamples 5 to 21 is 1,050° C. or lower. On the other hand, the sinteringtemperature for Comparative Example 1 is 1,100° C. to give unpreferableresult. The excessive content of filler causes presumably the difficultyin sintering. Therefore, the filler content of not more than 40% ispreferable.

The peripheral portion of sintered laminate was cut off to obtaincentral portion, and carbon content of the central portion wasdetermined, and it was found that residual carbon was 200 ppm or lessfor Examples 5 to 21 and Comparative Example 1, the result ispreferable. The resistance of copper conductor of sintered laminatecomprising 150 mm square green sheets was measured by the four terminalmethod, and it was found that the specific resistance of copperconductor was as low as 3 μΩ·cm for Examples 5 to 21 and ComparativeExample 1, these values are preferable.

(2) Examination of binder removal temperature

Heat treatment temperature for binder removal is examined. Using greensheet of Example 9, the green sheet was maintained at varioustemperatures to remove binder, and the time required for reducingresidual carbon in sintered ceramics to 200 ppm (binder removing time)was measured. The result is shown in FIG. 10. It is obvious from FIG. 10that the higher heat treatment temperature shorten the retention time atthe temperature, and it is preferable.

(3) Examination of filler content

The filler content required for binder removal is examined. Green sheetswhich were prepared using glasses with various compositions and fillerin various amounts (mullite (3Al₂ O₃.2SiO₂)) were subjected to binderremoval at 800 or 850° C., in some cases residual carbon content wasreduced to 200 ppm or less and in some cases residual carbon content wasnot reduced to 200 ppm or less. For the former cases, the relationshipbetween softening point of glass and filler content were obtained. Theresult is shown in FIG. 11.

As obvious in FIG. 11, filler content required for binder removalincreases with lowering of softening point of glass. The higher heattreatment temperature for binder removal requires the more amount offiller, because for completion of binder removal it is required thatsintering of glass does not proceed during the heat treatment for binderremoval. Therefore, the lower softening point and higher binder removingtemperature require the higher content of filler which obstructssintering.

Filler content required for compact sintering and sintering temperatureare examined. Four glass powders of the first composition (softeningpoint of 1,100° C.), the second composition (softening point of 1,000°C.), the fifth composition (softening point of 950° C.), and the tenthcomposition (softening point of 850° C.) were added with various amountsof filler (mullite) to prepare green sheets, the green sheet wassubjected to binder removal treatment, and sintered, when, sinteringtemperature, which is enough high to obtain sintered sample withrelative density of 98%, was determined. The relationship betweendetermined sintering temperature and filler content is shown in FIG. 12for each softening point of glasses. It is obvious in FIG. 12 that thehigher filler content and higher softening point require the higher heattreatment temperature required for compact sintering (sinteringtemperature).

The relationship between filler content and sintering temperature isexamined referring to sintering compaction curves shown in FIG. 13. Thesintering compaction curves were obtained by the following method. Agreen sheet laminate was placed in a transparent quartz glass reactiontube, the temperature was raised at a heating rate of 100° C./min, theshape and size of the green sheet laminate was measured by photographingthe green sheet laminate at various temperatures, and the relativedensity was calculated from the measured values. In FIG. 13, a curve 131is the sintering curve for green sheet prepared using the glass of thefourteenth composition (no filler), and curves 132 to 138 are thesintering curves for green sheets of Examples 5 to 11.

The curve 131 shows that a green sheet containing no filler is sinteredabruptly at a temperature near 800° C. and compacted. On the other hand,the curves 132 to 138 show the sintering behavior of green sheets ofExamples 5 to 11 comprising glass of the fourteenth composition and 10to 40% by volume of filler, that is, the slope of the sinteringcompaction curve becomes gentle with the increasing of filler content,the gentle slope suggests difficulty in sintering. Sintering compactioncurves shown in FIG. 13 are obtained at the retention time of zero ateach temperature, and by prolonging the retention time the compactionwill presumably proceed additionally.

To complete sintering within a short time using a sintering temperatureof 1,050° C. or lower, reduced filler content and use of glass with lowsoftening point are required. On the other hand, as describedhereinbefore, excessively low filler content and excessively low glasssoftening point can cause incomplete binder removal. In some cases thatthe filler content and softening point allows complete binder removal,the filler content and the softening point is not be preferable becauseof excessively high sintering temperature. For example, it isunderstandable from FIG. 11 that when a glass of 820° C. softening pointis used and filler content is 50% by volume, binder is removed at 800°C., but as estimated from FIG. 12 the sintering temperature will beunpreferably 1,050° C. or higher. Therefore, when a glass with thefourteenth composition is used, the highest filler content is estimatedto be 40% by volume to allow compact sintering at temperature of 1,050°C. or lower. Sintering compaction curve for other glasses with differentcompositions is obtained by parallel displacement in the abscissadirection of sintering compaction curve (curve 131) for a glass with thefourteenth composition in FIG. 13 depending on the glass softeningpoint.

The relationship between bending strength of sintered sample and fillercontent is examined. In addition to sintered samples obtained inExamples 5 to 11, sintered samples, which were prepared by binderremoving and sintering a green sheet comprising glass of the fourteenthcomposition without addition of filler, and by binder removing andsintering a green sheet comprising glass of the fourteenth compositionand 5% by volume of mullite filler, were prepared, and the bendingstrength of these sintered samples was measured according to JISstandard (R1601), that is, a specimen with a length of 38 mm, width of 4mm, and thickness of 3 mm was prepared and the specimen was subjected tothe three point bending test with a span of 30 mm. The obtainedrelationship between bending strength and filler content is shown inFIG. 14.

From FIG. 14, it is obvious that in a filler content range from 5% byvolume to 40% by volume, bending strength of practical level ispreferably obtained (in this case bending strength of 150 MPa orhigher). The bending strength of 200 MPa or higher is more preferable.

EXAMPLE 22

A multilayer circuit substrate (40 layers) shown in FIG. 15 wasmanufactured in the same manner as described in Example 5. Themultilayer circuit substrate 17 in this example comprises via holes 9with copper conductor, circuit 10, and a sintered glass ceramics 8.

Then, LSIs (large-scale integrated circuit) 11 and I/O (input output)pins 12 were mounted using connecting solders 13, 14 as shown in FIG.16, and subsequently microfins 15, a cooling jacket 16, and a connector18 were mounted as shown in FIG. 17 to construct an instructionprocessor 185.

Using this instruction processor 185, an electronic computer having amain memory unit 181, an expanded memory unit 182, a system controller183, input/output processor 184, and the instruction processor 185 wasfabricated, and the processing speed of this computer was compared withthat of a conventional electronic computer having an instructionprocessor which utilizes multilayer circuit substrate comprising mulliteas substrate material and tungsten as conducting material, theprocessing speed of the electronic computer of the invention was twicethat of the conventional electronic computer.

Circuit substrate manufactured in the same manner as described inExample 22 is widely applied to electronic circuit devices such aselectronic computers, especially when high speed and high density arerequired.

As described hereinbefore, the present invention provides a circuitsubstrate having various advantages, such as easy binder removal, easycompact sintering, thermal expansion coefficient adjustable to thethermal expansion coefficient of silicon which is preferable performanceas substrate, sufficient bending strength, and sufficiently low relativedielectric constant. Especially, composition of the present inventionhas softening point of as high as 850 to 1,100° C., therefore sinteringcompaction scarcely occurs during heat treatment for binder removal,binder is removed with only low filler content, and compact sintering iscompleted within a short time. Glass contained in ceramic compositionand the composition of the present invention has excellent waterresistance, boric acid crystal does not crystallize on green sheet, andwhen ceramic composition of the present invention is heat-treated,crystobalite crystal does not crystallize preferably from borosilicateglass. Accordingly, the productivity of circuit substrate production issignificantly enhanced by applying the present invention.

What is claimed is:
 1. A process of manufacturing a circuit substrate,comprising the steps of:preparing a slurry by mixing glass, filler,organic binder, and solvent, forming a green sheet from said slurry,forming a conductor by forming via holes and wiring using conductingmaterial on said green sheet, and heating said green sheet at 700° to880° C. to remove the binder, followed by heating at 900° to 1,050° C.to sinter, wherein said glass contains SiO₂, B₂ O₃, and R₂ O (Rrepresents alkali metal), and has a composition included in an area, ina triangular composition diagram of SiO₂ --B₂ O₃ --R₂ O, defined withfive lines comprising a line connecting a point of first composition anda point of third composition, a line connecting the point of thirdcomposition and a point of tenth composition, a line connecting thepoint of tenth composition and a point of eleventh composition, a lineconnecting the point of eleventh composition and a point of fourthcomposition, and a line connecting the point of fourth composition andthe point of first composition (the area includes the lines), wherein atotal weight of SiO₂, B₂ O₃, and R₂ O is 100%, the first compositionconsists of 88% by weight of SiO₂ and 12% by weight of B₂ O₃, the thirdcomposition consists of 82% by weight of SiO₂ and 18% by weight of B₂O₃, the tenth composition consists of 84% by weight of SiO₂, 10% byweight of B₂ O₃, and 6% by weight of R₂ O, the eleventh compositionconsists of 90% by weight of SiO₂, 5% by weight of B₂ O₃, and 5% byweight of R₂ O, and the fourth composition consists of 89% by weight ofSiO₂, 10% by weight of B₂ O₃, and 1% by weight of R₂ O.
 2. A process ofmanufacturing a circuit substrate as claimed in claim 1, wherein saidglass is a glass having the softening point of 850° to 1,1000° C.
 3. Aprocess of manufacturing a circuit substrate as claimed in claim 1,wherein said glass contains additionally Al₂ O₃ in an amount of 90% orless to molar amount of said R₂ O component.
 4. A process formanufacturing a circuit substrate as claimed in claim 1, wherein saidglass contains additionally ZnO component in an amount of 1 to 4% byweight to the total weight of glass.
 5. A process for manufacturing acircuit substrate as claimed in claim 1, further comprising a step oflaminating a plurality of green sheets, on which at least one of saidvia holes and said wiring is provided, to form a green sheet laminate,the laminating being performed between said conductor forming step andthe heating steps, the green sheet heated in said heating steps beingsaid green sheet laminate.
 6. A process for manufacturing a circuitsubstrate as claimed in claim 1, wherein said conductor is copper. 7.Glass having a composition included in an area, in a triangularcomposition diagram of SiO₂ --B₂ O₃ --R₂ O, defined with five linescomprising a line connecting a point of first composition and a point ofthird composition, a line connecting the point of third composition anda point of tenth composition, a line connecting the point of tenthcomposition and a point of eleventh composition, a line connecting thepoint of eleventh composition and a point of fourth composition, and aline connecting the point of fourth composition and the point of firstcomposition (the area includes the lines),wherein a total weight ofSiO₂, B₂ O₃, and R₂ O is 100%, the first composition consists of 88% byweight of SiO₂ and 12% by weight of B₂ O₃, the third compositionconsists of 82% by weight of SiO₂ and 18% by weight of B₂ O₃, the tenthcomposition consists of 84% by weight of SiO₂, 10% by weight of B₂ O₃,and 6% by weight of R₂ O, the eleventh composition consists of 90% byweight of SiO₂, 5% by weight of B₂ O₃, and 5% by weight of R₂ O, and thefourth composition consists of 89% by weight of SiO₂, 10% by weight ofB₂ O₃, and 1% by weight of R₂ O.
 8. Glass ceramic composition forcircuit substrates, comprising 60 to 95% by volume of glass and 40 to 5%by volume of filler,said glass containing SiO₂, B₂ O₃, and R₂ O (Rrepresents an alkali metal) and having a composition included in anarea, in a triangular composition diagram of SiO₂ --B₂ O₃ --R₂ O,defined with five lines comprising a line connecting a point of firstcomposition and a point of third composition, a line connecting thepoint of third composition and a point of tenth composition, a lineconnecting the point of tenth composition and a point of eleventhcomposition, a line connecting the point of eleventh composition and apoint of fourth composition, and a line connecting the point of fourthcomposition and the point of first composition (the area includes thelines), wherein a total weight of SiO₂, B₂ O₃, and R₂ O is 100%, thefirst composition consists of 88% by weight of SiO₂ and 12% by weight ofB₂ O₃, the third composition consists of 82% by weight of SiO₂ and 18%by weight of B₂ O₃, the tenth composition consists of 84% by weight ofSiO₂, 10% by weight of B₂ O₃, and 6% by weight of R₂ O, and the eleventhcomposition consists of 90% by weight of SiO₂, 5% by weight of B₂ O₃,and 5% by weight of R₂ O, the fourth composition consists of 89% byweight of SiO₂, 10% by weight of B₂ O₃, and 1% by weight of R₂ O.
 9. Anelectronic circuit module comprising:a multilayered circuit substratewith circuit substrates containing amorphous glass with a softeningpoint in a range of 850° to 1100° C., so as to facilitate removal ofbinder from green sheets used in forming the multilayered circuitsubstrate, and Cu wiring formed on said circuit substrates; and LSIs andI/O pins mounted on the multilayered circuit substrate and connected tothe Cu wiring.
 10. An electronic circuit module as claimed in claim 9,wherein said amorphous glass has a thermal expansion coefficient of2.5×10⁻⁶ to 3.5×10⁻⁶ and B₂ O₃ elution of 0 to 2.0 mg/m².
 11. Anelectronic circuit module as claimed in claim 9, wherein said circuitsubstrate contains 60 to 95% by volume of amorphous glass and 5 to 40%by volume of filler.
 12. An electronic circuit module as claimed inclaim 11, wherein said filler is at least one of alumina, mullite,cordierite and quartz.
 13. An electronic circuit module as claimed inclaim 9, wherein said glass has a glass softening point in a range of900° to 1100° C.
 14. An electronic circuit module as claimed in claim 9,wherein the circuit substrates are substrates formed by removing thebinder at a temperature of more than 850° C.
 15. An electronic circuitmodule for an instruction processor, comprising:a multilayered circuitsubstrate containing an amorphous glass with softening point in a rangeof 850° to 1100° C., so as to facilitate removal of binder from greensheets used in forming the multilayered circuit substrate, and Cu wiringformed on said circuit substrate; LSIs mounted on the multilayeredcircuit substrate; and I/O pins and cooling parts connected to themultilayer circuit substrate.
 16. An electronic circuit module asclaimed in claim 15, wherein said amorphous glass has a thermalexpansion coefficient of 2.5×10⁻⁶ to 3.5×10⁻⁶ and B₂ O₃ elution of 0 to2.0 mg/m².
 17. An electronic circuit module as claimed in claim 16,wherein said multilayer circuit substrate contains said amorphous glassand filler which is at least one of alumina, mullite, cordierite andquartz.
 18. An electronic circuit module as claimed in claim 15, whereinsaid glass has a glass softening point in a range of 900° to 1100° C.19. An electronic circuit module as claimed in claim 15, wherein thecircuit substrate is a substrate formed by removing the binder at atemperature of more than 850° C.
 20. A multilayered circuit substratecomprising:circuit substrates with relative dielectric constant of 4.3to 5.6, said substrates containing amorphous glass with a softeningpoint in a range of 850° to 1100° C., so as to facilitate removal ofbinder from green sheets used in forming the multilayered circuitsubstrate; and Cu wiring formed on said circuit substrates.
 21. Amultilayered circuit substrate as claimed in claim 20, wherein the glasshas a glass softening point in a range of 900° to 1100° C.
 22. Amultilayered circuit substrate as claimed in claim 20, wherein thecircuit substrates are substrates formed by removing the binder at atemperature of more than 850° C.
 23. An electronic computercomprising:an electronic circuit module for an instruction processorhaving a multilayered circuit substrate with circuit substratescontaining amorphous glass with a softening point in a range of 850° to1100° C., so as to facilitate removal of binder from green sheets usedin forming the multilayered circuit substrate, and Cu wiring formed onsaid circuit substrates, and LSIs mounted on the multilayered circuitsubstrate, and I/O pins and cooling parts connected to the multilayeredcircuit substrate; a system controlled connected to said electroniccircuit module; a memory connected to said system controller; and an I/Oprocessor connected to said system controller.
 24. An electroniccomputer as claimed in claim 23, wherein said amorphous glass has athermal expansion coefficient of 2.5×10⁻⁶ to 3.5×10⁻⁶ and B₂ O₃ elutionof 0 to 2.0 mg/m².
 25. An electronic computer as claimed in claim 24,wherein said multilayer circuit substrate contains an amorphous glassand filler which is at least one of alumina, mullite, cordierite andquartz.
 26. An electronic computer as claimed in claim 23, wherein theglass has a glass softening point in a range of 900° to 1100° C.
 27. Anelectronic computer as claimed in claim 23, wherein the circuitsubstrates are substrates formed by removing the binder at a temperatureof more than 850° C.
 28. An electronic circuit module comprising:amultilayered circuit substrate with circuit substrates containingamorphous glass with a glass softening point of 900° to 1100° C. and Cuwiring formed on said circuit substrates; and LSIs and I/O pins mountedon the multilayered circuit substrate and connecting to the Cu wiring.29. An electronic circuit module as claimed in claim 28, wherein themultilayered circuit substrate is a substrate formed by processingincluding removing binder from green sheets for forming the circuitsubstrate, at a temperature of more than 850° C.
 30. An electroniccircuit module for an instruction processor, comprising:a multilayeredcircuit substrate with circuit substrates containing amorphous glasswith a glass softening point of 900° to 1100° C. and Cu wiring formed onsaid circuit substrates; LSIs mounted on the multilayered circuitsubstrate; and I/O pins and cooling parts connected to the multilayeredcircuit substrate.
 31. An electronic circuit module as claimed in claim30, wherein the multilayered circuit substrate is a substrate formed byprocessing including removing binder from green sheets for forming thecircuit substrate, at a temperature of more than 850° C.
 32. Amultilayered circuit substrate comprising:circuit substrates withrelative dielectric constant of 4.3 to 5.6 and containing amorphousglass with a glass softening point of 900° to 1100° C.; and Cu wiringformed on said circuit substrates.
 33. A multilayered circuit substrateas claimed in claim 32, wherein the circuit substrates are substratesformed by processing including removing binder from green sheets forforming the circuit substrates, at a temperature of more than 850° C.34. An electronic computer comprising:an electronic circuit module foran instruction processor having a multilayered circuit substrate withcircuit substrates containing amorphous glass with a glass softeningpoint of 900° to 1100° C. and Cu wiring formed on said circuitsubstrates, LSIs mounted on the multilayered circuit substrate, and I/Opins and cooling parts connected to the multilayered circuit substrate;a system controller connected to said electronic circuit module; amemory connected to said system controller; and an I/O processorconnected to said system controller.
 35. An electronic computer asclaimed in claim 34, wherein the multilayered circuit substrate is asubstrate formed by processing including removing binder from greensheets for forming the multilayered circuit substrate, at a temperatureof more than 850° C.
 36. A multilayered circuit substratecomprising:circuit substrates with relative dielectric constant of 4.3to 5.6, said substrates containing amorphous glass with a softeningpoint in a range of 850° to 1100° C., so as to facilitate removal ofbinder from green sheets used in forming the multilayered circuitsubstrate, wherein said amorphous glass has a thermal expansioncoefficient of 2.5×10⁻⁶ to 3.5×10⁻⁶ ; and Cu wiring formed on saidcircuit substrates.
 37. A electronic circuit module comprising:amultilayered circuit substrate with circuit substrates having a relativedielectric constant of 4.3 to 5.6, said substrates containing amorphousglass with a softening point in a range of 850° to 1100° C., so as tofacilitate removal of binder from green sheets used in formed themultilayered circuit substrate, wherein said amorphous glass has athermal expansion coefficient of 2.5×10⁻⁶ to 3.5×10⁻⁶, and Cu wiringformed on said circuit substrates; and LSIs and I/O pins mounted on themultilayered circuit substrate and connected to the Cu wiring.
 38. Anelectronic computer comprising:an electronic circuit module including amultilayered circuit substrate with circuit substrates and Cu wiringformed on said circuit substrates, and LSIs and I/O pins mounted on themultilayered circuit substrate and connected to the Cu wiring, saidcircuit substrates having a relative dielectric constant of 4.3 to 5.6and containing amorphous glass with a softening point in a range of 850°to 1100° C., so as to facilitate removal of binder from green sheetsused in forming the multilayered circuit substrate, wherein saidamorphous glass has a thermal expansion coefficient of 2.5×10⁻⁶ to3.5×10⁻⁶ ; a system controller connected to said electronic circuitmodule; a memory connected to said system controller; and an I/Oprocessor connected to said system controller.
 39. A multilayeredcircuit substrate comprising:circuit substrates with relative dielectricconstant of 4.3 to 5.6, said substrates containing amorphous glass witha softening point in a range of 850° to 1100° C., so as to facilitateremoval of binder from green sheets used in forming the multilayeredcircuit substrate, wherein said amorphous glass has B₂ O₃ elution of 0to 2.0 mg/m² ; and Cu wiring formed on said circuit substrates.
 40. Aelectronic circuit module comprising:a multilayered circuit substratewith circuit substrates having a relative dielectric constant of 4.3 to5.6, said substrates containing amorphous glass with a softening pointin a range of 850° to 1100° C., so as to facilitate removal of binderfrom green sheets used in formed the multilayered circuit substrate,wherein said amorphous glass has B₂ O₃ elution of 0 to 2.0 mg/m², and Cuwiring formed on said circuit substrates; and LSIs and I/O pins mountedon the multilayered circuit substrate and connected to the Cu wiring.41. An electronic computer comprising:an electronic circuit moduleincluding a multilayered circuit substrate with circuit substrates andCu wiring formed on said circuit substrates, and LSIs and I/O pinsmounted on the multilayered circuit substrate and connected to the Cuwiring, said circuit substrates having a relative dielectric constant of4.3 to 5.6 and containing amorphous glass with a softening point in arange of 850° to 1100° C., so as to facilitate removal of binder fromgreen sheets used in forming the multilayered circuit substrate, whereinsaid amorphous glass has B₂ O₃ elution of 0 to 2.0 mg/m² ; a systemcontroller connected to said electronic circuit module; a memoryconnected to said system controller; and an I/O processor connected tosaid system controller.
 42. A multilayered circuit substratecomprising:circuit substrates with relative dielectric constant of 4.3to 5.6, said substrates containing amorphous glass with a softeningpoint in a range of 850° to 1100° C., wherein said amorphous glass has athermal expansion coefficient of 2.5×10⁻⁶ to 3.5×10⁻⁶ and B₂ O₃ elutionof 0 to 2.0 mg/m² ; and Cu wiring formed on said circuit substrates. 43.A electronic circuit module comprising:a multilayered circuit substratewith circuit substrates having a relative dielectric constant of 4.3 to5.6, said substrates containing amorphous glass with a softening pointin a range of 850° to 1100° C., wherein said amorphous glass has asthermal expansion coefficient of 2.5×10⁶ to 3.5×10⁻⁶ and B₂ O₃ elutionof 0 to 2.0 mg/m², and Cu wiring formed on said circuit substrates; andLSIs and I/O pins mounted on the multilayered circuit substrate andconnected to the Cu wiring.
 44. An electronic computer comprising:anelectronic circuit module including a multilayered circuit substratewith circuit substrates and Cu wiring formed on said circuit substrates,and LSIs and I/O pins mounted on the multilayered circuit substrate andconnected to the Cu wiring, said circuit substrates having a relativedielectric constant of 4.3 to 5.6 and containing amorphous glass with asoftening point in a range of 850° to 1100° C., wherein said amorphousglass has a thermal expansion coefficient of 2.5×10⁻⁶ to 3.5×10⁻⁶ and B₂O₃ elution of 0 to 2.0 mg/m² ; a system controller connected to saidelectronic circuit module; a memory connected to said system controller;and an I/O processor connected to said system controller.